Central Semiconductor Corp. MOSFET CWDM305ND TR13

Description
MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
Description
MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode
Datasheet
Datasheet Summary
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The CENTRAL SEMICONDUCTOR CWDM305ND is a dual N-channel enhancement-mode MOSFET in an SOIC-8 package, designed for high-speed pulsed amplifier and driver applications. It has a 30 V drain-source voltage rating, a continuous drain current of 5.8 A, and a maximum pulsed drain current of 23.2 A. The device features a low on-resistance of 0.024 Ω to 0.030 Ω at VGS=10 V and a low total gate charge of 4.2 nC to 6.3 nC. Thermal resistance is 62.5 °C/W, with an operating junction temperature range of -55 °C to +150 °C. The SOIC-8 package dimensions are 5.00 mm by 3.80 mm for the body, with a height of 1.554 mm. The part meets RoHS compliance and is marked with the code C305.

Datasheet Summary
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The CENTRAL SEMICONDUCTOR CWDM305ND is a dual N-channel enhancement-mode MOSFET in an SOIC-8 package, designed for high-speed pulsed amplifier and driver applications. It has a 30 V drain-source voltage rating, a continuous drain current of 5.8 A, and a maximum pulsed drain current of 23.2 A. The device features a low on-resistance of 0.024 Ω to 0.030 Ω at VGS=10 V and a low total gate charge of 4.2 nC to 6.3 nC. Thermal resistance is 62.5 °C/W, with an operating junction temperature range of -55 °C to +150 °C. The SOIC-8 package dimensions are 5.00 mm by 3.80 mm for the body, with a height of 1.554 mm. The part meets RoHS compliance and is marked with the code C305.

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Sheung Wan, Hong Kong
MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode

MOSFET SMD Small Sig Mosfet Dual N-Ch Enh Mode

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CWDM305ND TR13
Product Name MOSFET
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