Central Semiconductor Corp. MOSFET CWDM305N TR13

Description
MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W
Description
MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W
Datasheet
Datasheet Summary
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The CWDM305N is an N-channel enhancement-mode MOSFET in a SOIC-8 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 5.8 A, and a maximum pulsed drain current of 23.2 A for 10 μs pulses. The device exhibits a typical on-resistance of 0.024 Ω at VGS = 10 V and 2.9 A, with a low gate charge of 4.2 to 6.3 nC. It operates within a junction temperature range of -55 °C to +150 °C and has a thermal resistance of 62.5 °C/W. The package dimensions are 5.00 mm maximum length, 4.00 mm maximum width, and 1.55 mm maximum height. The part meets no specified industry standards beyond electrical performance. The TR13 suffix indicates tape and reel packaging, which is consistent with the series.

Datasheet Summary
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The CWDM305N is an N-channel enhancement-mode MOSFET in a SOIC-8 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 5.8 A, and a maximum pulsed drain current of 23.2 A for 10 μs pulses. The device exhibits a typical on-resistance of 0.024 Ω at VGS = 10 V and 2.9 A, with a low gate charge of 4.2 to 6.3 nC. It operates within a junction temperature range of -55 °C to +150 °C and has a thermal resistance of 62.5 °C/W. The package dimensions are 5.00 mm maximum length, 4.00 mm maximum width, and 1.55 mm maximum height. The part meets no specified industry standards beyond electrical performance. The TR13 suffix indicates tape and reel packaging, which is consistent with the series.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W

MOSFET N-Ch Enh Mode FET 30Vds 20Vgs 2.0W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CWDM305N TR13
Product Name MOSFET
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