Central Semiconductor Corp. Bipolar Transistors - BJT CMXT3906 TR

Description
Bipolar Transistors - BJT Dual PNP
Description
Bipolar Transistors - BJT Dual PNP
Datasheet
Datasheet Summary
Powered by GS/AI

The CMXT3906 is a dual PNP silicon transistor in a SOT-26 surface mount package, designed for general-purpose amplification and switching. It has a collector-base voltage rating of 40 V, collector-emitter voltage of 40 V, and continuous collector current of 200 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. Current gain (hFE) varies from 30 to 300 depending on collector current. The device meets RoHS standards and is marked with the code X2A.

Datasheet Summary
Powered by GS/AI

The CMXT3906 is a dual PNP silicon transistor in a SOT-26 surface mount package, designed for general-purpose amplification and switching. It has a collector-base voltage rating of 40 V, collector-emitter voltage of 40 V, and continuous collector current of 200 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. Current gain (hFE) varies from 30 to 300 depending on collector current. The device meets RoHS standards and is marked with the code X2A.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMXT3906 TR
Bipolar Transistors - BJT CMXT3906 TR
Bipolar Transistors - BJT Dual PNP

Bipolar Transistors - BJT Dual PNP

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMXT3906 TR
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data