Central Semiconductor Corp. Bipolar Transistors - BJT CMXT3904 TR

The CMXT3904 is a dual NPN silicon transistor in a SOT-26 surface mount package, designed for general-purpose small-signal amplification and switching. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, and continuous collector current of 200 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. Current gain (hFE) ranges from 30 to 300 depending on collector current. Transition frequency is 300 MHz at 10 mA and 20 V. Collector-emitter saturation voltage is 0.20 V at 10 mA and 0.30 V at 50 mA. Input and output capacitances are 12 pF and 4.0 pF respectively. Turn-on delay, rise, storage, and fall times are 35 ns, 35 ns, 200 ns, and 50 ns under specified test conditions.