Central Semiconductor Corp. MOSFET CMXDM7002A

The CMXDM7002A is a dual N-channel enhancement-mode MOSFET in a SOT-26 package, designed for high-speed pulsed amplifier and driver applications. Each transistor has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The gate-source voltage rating is 40 V, and the operating and storage junction temperature range is from -65 °C to +150 °C. The on-resistance is 2.0 Ω at 10 V gate-source voltage and 500 mA drain current, and 3.0 Ω at 5 V and 50 mA. The threshold voltage ranges from 1.0 V to 2.5 V. The device features a pin configuration with two independent transistors sharing no internal connections.