Central Semiconductor Corp. Bipolar Transistors - BJT CMUT5551 BK

The CMUT5551 is an NPN silicon transistor in an SOT-523 surface-mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 180 V, collector-emitter voltage of 160 V, emitter-base voltage of 6.0 V, continuous collector current of 600 mA, and power dissipation of 250 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 500 °C/W. Current gain (hFE) ranges from 30 to 250 depending on collector current. The transition frequency is 100 to 300 MHz, and the collector output capacitance is 6.0 pF. The transistor is marked with code 55C and has a lead configuration of base, emitter, collector from terminal 1 to 3. AEC-Q200, RoHS, and UL 94 V-0 qualifications are not specified.