Central Semiconductor Corp. Bipolar Transistors - BJT CMUT5401 TR

Description
Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 250mW
Description
Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 250mW
Datasheet
Datasheet Summary
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The CMUT5401 is a PNP silicon transistor in an SOT-523 surface mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 160 V, collector-emitter voltage of 150 V, and continuous collector current of 600 mA, with a power dissipation of 250 mW. The operating and storage junction temperature ranges from -65 °C to +150 °C, and thermal resistance is 500 °C/W. The device meets RoHS compliance and is marked with the code 4C5.

Datasheet Summary
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The CMUT5401 is a PNP silicon transistor in an SOT-523 surface mount package, designed for high-voltage amplifier applications. It has a collector-base voltage rating of 160 V, collector-emitter voltage of 150 V, and continuous collector current of 600 mA, with a power dissipation of 250 mW. The operating and storage junction temperature ranges from -65 °C to +150 °C, and thermal resistance is 500 °C/W. The device meets RoHS compliance and is marked with the code 4C5.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMUT5401 TR
Bipolar Transistors - BJT CMUT5401 TR
Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 250mW

Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 250mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMUT5401 TR
Product Name Bipolar Transistors - BJT
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