Central Semiconductor Corp. Bipolar Transistors - BJT CMUT5088E TR

The CMUT5088E is an NPN silicon transistor in an SOT-523 surface mount package, designed for high-gain, low-noise applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and emitter-base voltage of 5.0 V. The continuous collector current is 100 mA, with a power dissipation of 350 mW. The thermal resistance is 357 °C/W, and the junction temperature range is -65 to +150 °C. Enhanced specifications include a minimum hFE of 125 at IC=100 mA and VCE=5 V, a low collector-emitter saturation voltage of 225 mV at IC=100 mA and IB=10 mA, and a noise figure of 3.0 dB at IC=100 µA. The transition frequency is 100 MHz. The SOT-523 package has three leads: base, emitter, and collector.