Central Semiconductor Corp. Bipolar Transistors - BJT CMUT5087E TR

The CMUT5087E is a PNP silicon transistor in an SOT-523 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and continuous collector current of 100 mA. Power dissipation is 350 mW, with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. The device features a typical DC current gain (hFE) of 300 to 900 at IC=0.1 mA, transition frequency of 100 MHz, and noise figure of 3.0 dB. The transistor meets AEC-Q200 qualification.