Central Semiconductor Corp. Bipolar Transistors - BJT CMUT4401 TR

Description
Bipolar Transistors - BJT Complementary NPN 60Vcbo 40Vceo 250mW
Description
Bipolar Transistors - BJT Complementary NPN 60Vcbo 40Vceo 250mW
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The CMUT4401 is an NPN silicon transistor in a SOT-523 surface mount package, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage of 40 V, and a continuous collector current of 600 mA. Power dissipation is limited to 250 mW, with a thermal resistance of 500 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Electrical characteristics include a VCE(sat) of up to 0.75 V at 500 mA collector current, hFE ranging from 100 to 300 at VCE=1.0 V and IC=150 mA, and a transition frequency of 250 MHz. The package has a three-lead layout with base, emitter, and collector defined on the bottom view.

Datasheet Summary
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The CMUT4401 is an NPN silicon transistor in a SOT-523 surface mount package, designed for general purpose amplifier and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage of 40 V, and a continuous collector current of 600 mA. Power dissipation is limited to 250 mW, with a thermal resistance of 500 °C/W. The operating and storage junction temperature range is -65 to +150 °C. Electrical characteristics include a VCE(sat) of up to 0.75 V at 500 mA collector current, hFE ranging from 100 to 300 at VCE=1.0 V and IC=150 mA, and a transition frequency of 250 MHz. The package has a three-lead layout with base, emitter, and collector defined on the bottom view.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMUT4401 TR
Bipolar Transistors - BJT CMUT4401 TR
Bipolar Transistors - BJT Complementary NPN 60Vcbo 40Vceo 250mW

Bipolar Transistors - BJT Complementary NPN 60Vcbo 40Vceo 250mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMUT4401 TR
Product Name Bipolar Transistors - BJT
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