Central Semiconductor Corp. Bipolar Transistors - BJT CMUT2907A TR

The CMUT2907A is a PNP silicon transistor in an SOT-523 surface mount package, designed for small signal general purpose and switching applications. It has a collector-base voltage rating of 60 V, a collector-emitter voltage rating of 60 V, and a continuous collector current of 600 mA. Power dissipation is rated at 250 mW, with an operating and storage junction temperature range of -65 to +150°C. The thermal resistance is 500 °C/W. Current gain (hFE) ranges from 50 to 300 depending on collector current. Switching times include a turn-on delay of 10 ns, rise time of 40 ns, and turn-off delay of 100 ns. The device is marked with FC2 and complies with RoHS requirements as implied by the standard lead-free plating suffix options.