Central Semiconductor Corp. Bipolar Transistors - BJT CMUSH2-4L TR

Description
Bipolar Transistors - BJT Low Vf Schottky 40Vrrm 200If 250mW
Description
Bipolar Transistors - BJT Low Vf Schottky 40Vrrm 200If 250mW
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The CMUSH2-4L is a surface mount silicon low forward voltage Schottky diode in an SOT-523 package, designed for reverse polarity protection, voltage clamping, and flyback applications. It has a peak repetitive reverse voltage of 40 V, a continuous forward current of 200 mA, and a peak forward surge current of 1.0 A. The forward voltage is 240 mV at 10 mA and 420 mV at 200 mA. The power dissipation is 250 mW, with an operating junction temperature range of -65 °C to +150 °C. Thermal resistance is 500 °C/W. Reverse current is 11 to 50 μA at 20 V. The SOT-523 package has three pins: anode, no connection, and cathode. The device is RoHS compliant and meets UL 94 V-0 flammability rating.

Datasheet Summary
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The CMUSH2-4L is a surface mount silicon low forward voltage Schottky diode in an SOT-523 package, designed for reverse polarity protection, voltage clamping, and flyback applications. It has a peak repetitive reverse voltage of 40 V, a continuous forward current of 200 mA, and a peak forward surge current of 1.0 A. The forward voltage is 240 mV at 10 mA and 420 mV at 200 mA. The power dissipation is 250 mW, with an operating junction temperature range of -65 °C to +150 °C. Thermal resistance is 500 °C/W. Reverse current is 11 to 50 μA at 20 V. The SOT-523 package has three pins: anode, no connection, and cathode. The device is RoHS compliant and meets UL 94 V-0 flammability rating.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMUSH2-4L TR
Bipolar Transistors - BJT CMUSH2-4L TR
Bipolar Transistors - BJT Low Vf Schottky 40Vrrm 200If 250mW

Bipolar Transistors - BJT Low Vf Schottky 40Vrrm 200If 250mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMUSH2-4L TR
Product Name Bipolar Transistors - BJT
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