The CENTRAL SEMICONDUCTOR CMUSH2-4C is a dual common cathode silicon Schottky diode in a SOT-523 surface mount package, designed for fast switching applications with a low forward voltage drop. It has a peak repetitive reverse voltage of 40 V, a continuous forward current of 200 mA, and a power dissipation of 250 mW. The junction operating temperature ranges from -65 °C to +150 °C, with a thermal resistance of 500 °C/W. Reverse leakage at 25 °C is up to 500 nA, increasing to 100 μA at 100 °C. Forward voltage is 330 mV at 1 mA and 750 mV at 100 mA. Recovery time is 5.0 ns, and junction capacitance is 10 pF at 1 V and 1 MHz. The device is epoxy molded and marked with code C4C.
Bipolar Transistors - BJT Dual U-Mini Schottky 40Vrrm 200If 250mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMUSH2-4C TR |
| Product Name | Bipolar Transistors - BJT |
