The CENTRAL SEMICONDUCTOR CMUSH2-4A is a dual, common anode silicon Schottky diode in a SOT-523 surface mount package, designed for fast switching with low forward voltage drop. It has a peak repetitive reverse voltage of 40 V, a continuous forward current of 200 mA, and a power dissipation of 250 mW. The junction temperature ranges from -65°C to +150°C, with a thermal resistance of 500 °C/W. Forward voltage drop is 670 mV at 100 mA, and reverse leakage is 500 nA at 25°C, increasing to 100 μA at 100°C. Reverse recovery time is 5.0 ns. The device is epoxy molded and meets RoHS compliance.
Bipolar Transistors - BJT Dual U-Mini Schottky 40Vrrm 200If 250mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMUSH2-4A TR |
| Product Name | Bipolar Transistors - BJT |
