Central Semiconductor Corp. MOSFET CMUDM8005 TR

The CMUDM8005 is a P-channel enhancement-mode MOSFET in an SOT-523 surface-mount package, designed for low-voltage, high-speed switching in battery-powered portable equipment and power supply converter circuits. It has a drain-source voltage rating of 20 V, a continuous drain current of 650 mA, and a power dissipation of 300 mW. The gate-source voltage is rated at 8.0 V, with a threshold voltage ranging from 0.5 V to 1.0 V. On-resistance is specified as 0.25 Ω at 4.5 V gate drive and 350 mA drain current. The device features ESD protection up to 1800 V (Human Body Model) and an operating junction temperature range of -65 °C to +150 °C. The SOT-523 package has a pin configuration of gate, source, and drain. It meets RoHS compliance and is marked with code 5C8.