Central Semiconductor Corp. MOSFET CMUDM8004 TR

The CMUDM8004 is a P-channel enhancement-mode MOSFET in an SOT-523 surface-mount package, designed for low-power switching and driver applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 450 mA, and a maximum power dissipation of 250 mW. The device features a low threshold voltage of 0.5 to 1.0 V and low on-resistance, ranging from 1.0 Ω at 4.5 V gate drive to 3.3 Ω at 1.8 V. It offers ESD protection up to 2 kV and is halogen-free by design. The operating and storage junction temperature range is -65 to +150 °C. The part is compatible with logic-level signals and is paired with the complementary N-channel MOSFET CMUDM7004.