Central Semiconductor Corp. Bipolar Transistors - BJT CMST5089 BK

The CMST5089 is an NPN silicon transistor in a SOT-323 surface mount package, designed for high gain and low noise applications. It has a collector-emitter voltage rating of 25 V, a collector-base voltage of 30 V, an emitter-base voltage of 4.5 V, a continuous collector current of 50 mA, and a power dissipation of 275 mW. The operating and storage junction temperature range is -65°C to +150°C, with a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 400 to 1200 at VCE=5.0V and IC=0.1mA, and 450 at IC=1.0mA. The transition frequency is 50 MHz, and noise figure is 2.0 dB maximum at IC=100μA and RS=10kΩ. The device meets RoHS compliance and is marked with code 1RC.