Central Semiconductor Corp. Bipolar Transistors - BJT CMST5088 BK

The CMST5088 is an NPN silicon transistor manufactured in a SOT-323 surface mount package for high-gain, low-noise applications. It has a collector-base voltage rating of 35 V, collector-emitter voltage of 30 V, emitter-base voltage of 4.5 V, and a continuous collector current of 50 mA. Power dissipation is rated at 275 mW with a thermal resistance of 455 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. Current gain (hFE) ranges from 300 to 900 at VCE=5 V and IC=0.1 mA. Transition frequency is 50 MHz at IC=500 µA. The device meets RoHS compliance and is marked as 1QC.