Central Semiconductor Corp. Bipolar Transistors - BJT CMST5086 BK

Description
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW
Description
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW
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The CMST5086 is a PNP silicon transistor in a SOT-323 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, emitter-base voltage of 3.0 V, continuous collector current of 50 mA, and power dissipation of 275 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 150 to 500 at IC=0.1 mA and VCE=5.0 V. Noise figure is ≤3.0 dB at IC=20 mA and ≤2.0 dB at IC=100 μA. The transition frequency is 40 MHz.

Datasheet Summary
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The CMST5086 is a PNP silicon transistor in a SOT-323 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, emitter-base voltage of 3.0 V, continuous collector current of 50 mA, and power dissipation of 275 mW. The operating and storage junction temperature range is -65 to +150 °C, with a thermal resistance of 455 °C/W. Current gain (hFE) ranges from 150 to 500 at IC=0.1 mA and VCE=5.0 V. Noise figure is ≤3.0 dB at IC=20 mA and ≤2.0 dB at IC=100 μA. The transition frequency is 40 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMST5086 BK
Bipolar Transistors - BJT CMST5086 BK
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW

Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 275mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMST5086 BK
Product Name Bipolar Transistors - BJT
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