Central Semiconductor Corp. Bipolar Transistors - BJT CMST3906 TR

Description
Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW
Description
Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW
Datasheet
Datasheet Summary
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The CMST3906 is a PNP silicon transistor in an SOT-323 surface mount package, designed for general purpose switching and amplification. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 40 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 200 mA. Power dissipation is rated at 275 mW with a thermal resistance of 455 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. The device meets RoHS compliance and is marked with the code 2AC.

Datasheet Summary
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The CMST3906 is a PNP silicon transistor in an SOT-323 surface mount package, designed for general purpose switching and amplification. It has a collector-emitter voltage rating of 40 V, a collector-base voltage of 40 V, an emitter-base voltage of 5.0 V, and a continuous collector current of 200 mA. Power dissipation is rated at 275 mW with a thermal resistance of 455 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. The device meets RoHS compliance and is marked with the code 2AC.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMST3906 TR
Bipolar Transistors - BJT CMST3906 TR
Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW

Bipolar Transistors - BJT 40Vcbo 40Vceo Comp 5.0Vebo 200mA 275mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMST3906 TR
Product Name Bipolar Transistors - BJT
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