NPN silicon transistor in SOT-323 surface-mount package for small signal and switching applications, with a collector-base voltage of 75 V, collector-emitter voltage of 40 V, continuous collector current of 600 mA, and power dissipation of 275 mW. Operating and storage junction temperature ranges from -65 °C to +150 °C. Thermal resistance is 455 °C/W. The device meets RoHS standards.
Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMST2222A TR TIN/LEAD |
| Product Name | Bipolar Transistors - BJT |
