Central Semiconductor Corp. Bipolar Transistors - BJT CMST2222A BK

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Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW
Description
Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW
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NPN silicon transistor in SOT-323 surface mount package for general purpose and switching applications, with a collector-emitter voltage rating of 40 V, continuous collector current of 600 mA, and power dissipation of 275 mW. Operating and storage junction temperature ranges from -65 to +150 °C. Thermal resistance is 455 °C/W. Features transition frequency of 300 MHz and saturation voltage of 0.3 V at 150 mA collector current. Complies with RoHS standards.

Datasheet Summary
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NPN silicon transistor in SOT-323 surface mount package for general purpose and switching applications, with a collector-emitter voltage rating of 40 V, continuous collector current of 600 mA, and power dissipation of 275 mW. Operating and storage junction temperature ranges from -65 to +150 °C. Thermal resistance is 455 °C/W. Features transition frequency of 300 MHz and saturation voltage of 0.3 V at 150 mA collector current. Complies with RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMST2222A BK
Bipolar Transistors - BJT CMST2222A BK
Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW

Bipolar Transistors - BJT NPN Vcbo 5V Trans Vceo 40V 600mA 275mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMST2222A BK
Product Name Bipolar Transistors - BJT
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