Central Semiconductor Corp. MOSFET CMRDM7590 TR

Description
MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm
Description
MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm
Datasheet
Datasheet Summary
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The CMRDM7590 is a dual P-channel enhancement-mode MOSFET in a SOT-963 surface mount package with a maximum profile of 0.5mm. It has a drain-source voltage rating of 20V, a gate-source voltage rating of 8.0V, and a continuous drain current of 140mA. The device dissipates 125mW and features low rDS(ON) values ranging from 4.0Ω to 20Ω depending on gate-source voltage. It is designed for load switching, power supply conversion, and battery-powered portable devices, with logic-level compatibility and a halogen-free design. The thermal resistance is 1000°C/W and the operating junction temperature ranges from -65°C to +150°C.

Datasheet Summary
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The CMRDM7590 is a dual P-channel enhancement-mode MOSFET in a SOT-963 surface mount package with a maximum profile of 0.5mm. It has a drain-source voltage rating of 20V, a gate-source voltage rating of 8.0V, and a continuous drain current of 140mA. The device dissipates 125mW and features low rDS(ON) values ranging from 4.0Ω to 20Ω depending on gate-source voltage. It is designed for load switching, power supply conversion, and battery-powered portable devices, with logic-level compatibility and a halogen-free design. The thermal resistance is 1000°C/W and the operating junction temperature ranges from -65°C to +150°C.

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Sheung Wan, Hong Kong
MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm

MOSFET 20V P-Ch Enh FET 8.0Vgs 125mW 0.5mm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMRDM7590 TR
Product Name MOSFET
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