Central Semiconductor Corp. MOSFET CMRDM3590

The CMRDM3590 is a dual N-channel enhancement-mode MOSFET designed for high-speed pulsed amplifier and driver applications. It is packaged in an SOT-963 surface-mount case with a maximum profile height of 0.5 mm. The device has a drain-source voltage rating of 20 V, a gate-source voltage rating of 8.0 V, and a continuous drain current of 160 mA. Power dissipation is rated at 125 mW, with a thermal resistance of 1000 °C/W. It features low on-resistance, with rDS(ON) values ranging from 1.5 Ω to 10 Ω depending on gate voltage, and a low threshold voltage between 0.4 V and 1.0 V. The MOSFET is logic-level compatible and halogen-free by design. Operating and storage junction temperatures range from -65 °C to +150 °C.