Central Semiconductor Corp. Bipolar Transistors - BJT CMPTA06 TR

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Bipolar Transistors - BJT NPN Med Power
Description
Bipolar Transistors - BJT NPN Med Power
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The CMPTA06 is an NPN silicon transistor in an SOT-23 surface mount package, designed for small signal general purpose and switching applications. It has a collector-base voltage rating of 80 V, collector-emitter voltage of 80 V, and continuous collector current of 500 mA. Power dissipation is 350 mW with a thermal resistance of 429 °C/W. The operating and storage junction temperature ranges from -65 to +175 °C. The current gain (hFE) is a minimum of 100 at VCE=1.0V and IC=10mA. The transition frequency (fT) is 100 MHz at VCE=2.0V, IC=10mA, and f=100MHz. The SOT-23 package has pins 1: Base, 2: Emitter, and 3: Collector. The part is marked C1G.

Datasheet Summary
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The CMPTA06 is an NPN silicon transistor in an SOT-23 surface mount package, designed for small signal general purpose and switching applications. It has a collector-base voltage rating of 80 V, collector-emitter voltage of 80 V, and continuous collector current of 500 mA. Power dissipation is 350 mW with a thermal resistance of 429 °C/W. The operating and storage junction temperature ranges from -65 to +175 °C. The current gain (hFE) is a minimum of 100 at VCE=1.0V and IC=10mA. The transition frequency (fT) is 100 MHz at VCE=2.0V, IC=10mA, and f=100MHz. The SOT-23 package has pins 1: Base, 2: Emitter, and 3: Collector. The part is marked C1G.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMPTA06 TR
Bipolar Transistors - BJT CMPTA06 TR
Bipolar Transistors - BJT NPN Med Power

Bipolar Transistors - BJT NPN Med Power

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMPTA06 TR
Product Name Bipolar Transistors - BJT
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