Central Semiconductor Corp. Bipolar Transistors - BJT CMPT930 TR

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Bipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mW
Description
Bipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mW
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The CMPT930 is an NPN silicon transistor in an SOT-23 surface mount package, designed for small signal general purpose and switching applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage rating of 45 V, an emitter-base voltage rating of 5.0 V, and a continuous collector current of 30 mA. The device dissipates up to 350 mW and operates with a junction temperature range from -65 to +150 °C. The thermal resistance is 357 °C/W. Current gain (hFE) ranges from 600 at IC=10 mA to 100 at IC=10 μA, with a transition frequency of 30 MHz. Noise figure is 3.0 dB under specified conditions.

Datasheet Summary
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The CMPT930 is an NPN silicon transistor in an SOT-23 surface mount package, designed for small signal general purpose and switching applications. It has a collector-base voltage rating of 45 V, a collector-emitter voltage rating of 45 V, an emitter-base voltage rating of 5.0 V, and a continuous collector current of 30 mA. The device dissipates up to 350 mW and operates with a junction temperature range from -65 to +150 °C. The thermal resistance is 357 °C/W. Current gain (hFE) ranges from 600 at IC=10 mA to 100 at IC=10 μA, with a transition frequency of 30 MHz. Noise figure is 3.0 dB under specified conditions.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMPT930 TR
Bipolar Transistors - BJT CMPT930 TR
Bipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mW

Bipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMPT930 TR
Product Name Bipolar Transistors - BJT
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