Central Semiconductor Corp. Bipolar Transistors - BJT CMPT918 TR

The CMPT918 is an NPN silicon RF transistor in an SOT-23 surface-mount package, designed for VHF/UHF amplifier and oscillator applications. It has a collector-base voltage rating of 30 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The transistor features a transition frequency of 600 MHz at 100 MHz, a power output of 30 mW at 500 MHz, and a noise figure of 6.0 dB at 60 MHz. The operating and storage junction temperature range is -65 to +150 °C. The device is marked with the code C3B and complies with RoHS.