Central Semiconductor Corp. Bipolar Transistors - BJT CMPT6520 TR

The CMPT6520 is a PNP silicon transistor in an SOT-23 package, designed for high voltage driver and amplifier applications. It has a collector-base voltage rating of 350 V, a collector-emitter voltage rating of 350 V, and a continuous collector current of 500 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 to +150 °C. The emitter-base voltage is rated at 5.0 V. Current gain (hFE) ranges from 15 to 200 depending on collector current. Transition frequency is 40 to 200 MHz at 10 mA collector current and 20 MHz. Collector-base capacitance is 6.0 pF at 20 V reverse bias, and emitter-base capacitance is 100 pF at 0.5 V reverse bias. The part is marked C2Z and complies with RoHS requirements.