Central Semiconductor Corp. Bipolar Transistors - BJT CMPT591E TR

The CMPT591E is a PNP silicon transistor in an SOT-23 surface mount package, designed for high current general purpose amplifier applications. It features a maximum collector-emitter voltage of 60 V, continuous collector current of 1.0 A, and power dissipation of 350 mW. The device has a low collector-emitter saturation voltage of 0.40 V at 1.0 A collector current and a minimum current gain (hFE) of 200 at 500 mA. The thermal resistance is 357 °C/W, and the operating junction temperature ranges from -65 °C to +150 °C. The part is marked with the code C59 and has a complementary NPN type, CMPT491E.