The CMPT5401E is a PNP silicon transistor in an SOT-23 package for general-purpose amplification and switching, with a 220 V collector-emitter voltage and 600 mA continuous collector current. It dissipates 350 mW and has a 357 °C/W thermal resistance. The collector-base breakdown voltage is 250 V, saturation voltage is 150 mV at IC=50 mA, and transition frequency is up to 300 MHz. Minimum hFE is 75 at IC=50 mA and VCE=5 V. The SOT-23 package conforms to Rev: R4 dimensions. The CMPT5401E BK variant is discontinued and replaced by CMPT5401 BK; the same electrical and mechanical specifications apply to the series. Operating junction temperature ranges from -65 °C to +150 °C.
Bipolar (BJT) Transistor PNP 220V 600mA 300MHz 350mW Surface Mount SOT-23
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | CMPT5401EBK-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |