Central Semiconductor Corp. Bipolar Transistors - BJT CMPT5179 TR

Description
Bipolar Transistors - BJT NPN RF Oscillator
Description
Bipolar Transistors - BJT NPN RF Oscillator
Datasheet
Datasheet Summary
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The CMPT5179 is an NPN silicon RF transistor in an SOT-23 surface-mount package, designed for low-noise amplification and high-frequency oscillator applications. It has a collector-base voltage rating of 20 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA, with a power dissipation of 350 mW. The transition frequency (fT) is 900 to 1450 MHz at VCE=6.0 V and IC=5.0 mA. Noise figure is 4.5 dB at 200 MHz, and collector-base capacitance is 1.0 pF at 1.0 MHz. Operating junction temperature ranges from -65 to +150 °C. The part meets RoHS compliance and is epoxy molded.

Datasheet Summary
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The CMPT5179 is an NPN silicon RF transistor in an SOT-23 surface-mount package, designed for low-noise amplification and high-frequency oscillator applications. It has a collector-base voltage rating of 20 V, collector-emitter voltage of 15 V, and continuous collector current of 50 mA, with a power dissipation of 350 mW. The transition frequency (fT) is 900 to 1450 MHz at VCE=6.0 V and IC=5.0 mA. Noise figure is 4.5 dB at 200 MHz, and collector-base capacitance is 1.0 pF at 1.0 MHz. Operating junction temperature ranges from -65 to +150 °C. The part meets RoHS compliance and is epoxy molded.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMPT5179 TR
Bipolar Transistors - BJT CMPT5179 TR
Bipolar Transistors - BJT NPN RF Oscillator

Bipolar Transistors - BJT NPN RF Oscillator

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMPT5179 TR
Product Name Bipolar Transistors - BJT
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