Central Semiconductor Corp. Bipolar Transistors - BJT CMPT5087E TR

The CMPT5087E is a PNP silicon transistor in an SOT-23 surface mount package, designed for high gain and low noise applications. It has a collector-base voltage rating of 50 V, a collector-emitter voltage of 50 V, and a continuous collector current of 100 mA. Power dissipation is 350 mW, with a thermal resistance of 357 °C/W. The junction temperature range is -65 °C to +150 °C. Current gain (hFE) ranges from 50 to 900 depending on collector current, with a transition frequency of 100 MHz. Noise figure is 3.0 dB at 100 µA and 10 Hz to 15.7 kHz. The base-emitter saturation voltage is 700 mV at 10 mA collector current.