Central Semiconductor Corp. Bipolar Transistors - BJT CMPT4209 BK

Description
Bipolar Transistors - BJT PNP 15Vcbo 15 Vceo 200mA 350mW 7.0pF
Description
Bipolar Transistors - BJT PNP 15Vcbo 15 Vceo 200mA 350mW 7.0pF
Datasheet
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The CMPT4209 is a PNP silicon transistor in a SOT-23 package for high-speed switching applications. It has a collector-base voltage rating of 15 V, a collector-emitter voltage rating of 15 V, and a continuous collector current of 200 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. Current gain (hFE) ranges from 20 to 120 depending on operating conditions. Transition frequency (fT) is 850 MHz at 10 mA and 100 MHz. Output and input capacitances are 7.0 pF. The device meets no explicitly stated industry standards.

Datasheet Summary
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The CMPT4209 is a PNP silicon transistor in a SOT-23 package for high-speed switching applications. It has a collector-base voltage rating of 15 V, a collector-emitter voltage rating of 15 V, and a continuous collector current of 200 mA. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The operating and storage junction temperature ranges from -65 °C to +150 °C. Current gain (hFE) ranges from 20 to 120 depending on operating conditions. Transition frequency (fT) is 850 MHz at 10 mA and 100 MHz. Output and input capacitances are 7.0 pF. The device meets no explicitly stated industry standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMPT4209 BK
Bipolar Transistors - BJT CMPT4209 BK
Bipolar Transistors - BJT PNP 15Vcbo 15 Vceo 200mA 350mW 7.0pF

Bipolar Transistors - BJT PNP 15Vcbo 15 Vceo 200mA 350mW 7.0pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMPT4209 BK
Product Name Bipolar Transistors - BJT
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