Central Semiconductor Corp. Bipolar Transistors - BJT CMPT3906TR

Complementary silicon transistors in a surface mount SOT-23 package, designed for small signal general purpose amplifier and switching applications. The PNP variant has a collector-base voltage rating of 40 V, collector-emitter voltage of 40 V, emitter-base voltage of 5.0 V, continuous collector current of 200 mA, and power dissipation of 350 mW. Operating and storage junction temperature ranges from -65°C to +150°C. Thermal resistance is 357 °C/W. The device is halogen-free by design. Electrical characteristics include a current gain (hFE) of 60 to 300 at IC=10 mA, collector-emitter saturation voltage of 0.25 V at IC=10 mA and IB=1.0 mA, and transition frequency of 250 MHz. The SOT-23 package has dimensions of 2.80 to 3.05 mm in length and 1.19 to 1.40 mm in width. The part meets halogen-free requirements.