Central Semiconductor Corp. Bipolar Transistors - BJT CMPT3906E

The CMPT3906E is a PNP silicon bipolar transistor in a SOT-23 surface mount package, designed for small signal switching and driver circuits. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, and emitter-base voltage of 6.0 V, with a continuous collector current of 200 mA and power dissipation of 350 mW. The device features a maximum VCE(sat) of 0.2 V at IC=50mA and IB=5.0mA, and a minimum hFE of 70 at VCE=1.0V and IC=50mA. Operating and storage junction temperatures range from -65°C to +150°C, with a thermal resistance of 357 °C/W. The part meets RoHS compliance and is marked with the code C2AE.