Central Semiconductor Corp. Bipolar Transistors - BJT CMPT3019 BK

Description
Bipolar Transistors - BJT SS Transistor NPN High Curr
Description
Bipolar Transistors - BJT SS Transistor NPN High Curr
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The CMPT3019 is an NPN silicon transistor in an SOT-23 package, designed for high-current general-purpose amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a power dissipation of 350 mW. The device operates with a junction temperature range of -65 to +150 °C and features a thermal resistance of 357 °C/W. Current gain (hFE) ranges from 50 to 300 depending on collector current, with a transition frequency of 100 to 400 MHz at 50 mA. Collector-emitter saturation voltage is 0.2 V at 150 mA and 0.5 V at 500 mA. The device is marked with code C3A and has an SOT-23 pinout: base, emitter, collector.

Datasheet Summary
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The CMPT3019 is an NPN silicon transistor in an SOT-23 package, designed for high-current general-purpose amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 500 mA, and a power dissipation of 350 mW. The device operates with a junction temperature range of -65 to +150 °C and features a thermal resistance of 357 °C/W. Current gain (hFE) ranges from 50 to 300 depending on collector current, with a transition frequency of 100 to 400 MHz at 50 mA. Collector-emitter saturation voltage is 0.2 V at 150 mA and 0.5 V at 500 mA. The device is marked with code C3A and has an SOT-23 pinout: base, emitter, collector.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMPT3019 BK
Bipolar Transistors - BJT CMPT3019 BK
Bipolar Transistors - BJT SS Transistor NPN High Curr

Bipolar Transistors - BJT SS Transistor NPN High Curr

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMPT3019 BK
Product Name Bipolar Transistors - BJT
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