Central Semiconductor Corp. Bipolar Transistors - BJT CMPT2907A TR

The CMPT2907A is a PNP silicon transistor in a SOT-23 surface-mount package, designed for general-purpose small signal and switching applications. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 60 V, and continuous collector current of 600 mA. Power dissipation is rated at 350 mW, with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. Current gain (hFE) varies from 50 to 300 depending on collector current. The switching times are specified with turn-on delay of 10 ns, turn-on rise time of 40 ns, turn-off delay of 100 ns, and storage time of 80 ns. The device meets RoHS compliance.