Central Semiconductor Corp. JFET CMPF4391 TR

Description
JFET N-Ch JFET 40Vgd 40Vgs 40Vds 350mW
Description
JFET N-Ch JFET 40Vgd 40Vgs 40Vds 350mW
Datasheet
Datasheet Summary
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The CMPF4391 is an N-channel silicon JFET in an SOT-23 surface mount package, designed for switching applications. It has a maximum drain-gate, gate-source, and drain-source voltage of 40 V, with a power dissipation of 350 mW and an operating junction temperature range of -65°C to +150°C. The thermal resistance is 357 °C/W. The device exhibits a drain-source current (IDSS) of 50 to 150 mA at VDS=20 V and a gate-source cutoff voltage (VGS(OFF)) of 4.0 to 10 V at VDS=20 V and ID=1.0 nA. The on-resistance (rDS(ON)) is up to 30 Ω at ID=1.0 mA and VGS=0. Input capacitance (Ciss) is up to 14 pF at VDS=20 V, VGS=0, f=1.0 MHz. The package dimensions conform to the SOT-23 (Rev: R4) mechanical outline. The part is marked with code 6J. It meets RoHS restrictions and is qualified to AEC-Q200.

Datasheet Summary
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The CMPF4391 is an N-channel silicon JFET in an SOT-23 surface mount package, designed for switching applications. It has a maximum drain-gate, gate-source, and drain-source voltage of 40 V, with a power dissipation of 350 mW and an operating junction temperature range of -65°C to +150°C. The thermal resistance is 357 °C/W. The device exhibits a drain-source current (IDSS) of 50 to 150 mA at VDS=20 V and a gate-source cutoff voltage (VGS(OFF)) of 4.0 to 10 V at VDS=20 V and ID=1.0 nA. The on-resistance (rDS(ON)) is up to 30 Ω at ID=1.0 mA and VGS=0. Input capacitance (Ciss) is up to 14 pF at VDS=20 V, VGS=0, f=1.0 MHz. The package dimensions conform to the SOT-23 (Rev: R4) mechanical outline. The part is marked with code 6J. It meets RoHS restrictions and is qualified to AEC-Q200.

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Sheung Wan, Hong Kong
JFET N-Ch JFET 40Vgd 40Vgs 40Vds 350mW

JFET N-Ch JFET 40Vgd 40Vgs 40Vds 350mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number CMPF4391 TR
Product Name JFET
Transistor Type JFET
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