Central Semiconductor Corp. MOSFET CMPDM7003 TR

Description
MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD
Description
MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD
Datasheet
Datasheet Summary
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The CMPDM7003 is an N-channel enhancement-mode MOSFET in an SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It features a 50 V drain-source voltage rating, a continuous drain current of 280 mA, and a maximum power dissipation of 350 mW. The device offers low rDS(ON) values ranging from 1.1 Ω to 3.0 Ω depending on gate drive voltage, a low threshold voltage of 0.49 to 1.0 V, and ESD protection up to 2 kV. It supports logic-level gate drive and is suitable for load switching and battery-powered portable equipment. The operating and storage junction temperature range is -65 °C to +150 °C. The SOT-23 package has a 3-pin configuration with gate, source, and drain terminals. The part meets RoHS compliance and is marked with 'C7003'.

Datasheet Summary
Powered by GS/AI

The CMPDM7003 is an N-channel enhancement-mode MOSFET in an SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It features a 50 V drain-source voltage rating, a continuous drain current of 280 mA, and a maximum power dissipation of 350 mW. The device offers low rDS(ON) values ranging from 1.1 Ω to 3.0 Ω depending on gate drive voltage, a low threshold voltage of 0.49 to 1.0 V, and ESD protection up to 2 kV. It supports logic-level gate drive and is suitable for load switching and battery-powered portable equipment. The operating and storage junction temperature range is -65 °C to +150 °C. The SOT-23 package has a 3-pin configuration with gate, source, and drain terminals. The part meets RoHS compliance and is marked with 'C7003'.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD

MOSFET N-Ch Enh Mode FET 50Vds 50Vdg 350pD

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMPDM7003 TR
Product Name MOSFET
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