Central Semiconductor Corp. MOSFET CMPDM7002AG TR

Description
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Description
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Datasheet
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The CMPDM7002AG is a surface mount N-channel enhancement-mode MOSFET in a SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. The device dissipates up to 350 mW and operates with a junction temperature range of -65°C to +150°C. It features a thermal resistance of 357 °C/W, a low on-state resistance of 2.0 Ω at 10 V gate-source voltage and 500 mA drain current, and a gate-source threshold voltage between 1.0 V and 2.5 V. The device is halogen-free by design. The SOT-23 package has three leads: gate, source, and drain.

Datasheet Summary
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The CMPDM7002AG is a surface mount N-channel enhancement-mode MOSFET in a SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. The device dissipates up to 350 mW and operates with a junction temperature range of -65°C to +150°C. It features a thermal resistance of 357 °C/W, a low on-state resistance of 2.0 Ω at 10 V gate-source voltage and 500 mA drain current, and a gate-source threshold voltage between 1.0 V and 2.5 V. The device is halogen-free by design. The SOT-23 package has three leads: gate, source, and drain.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs

MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMPDM7002AG TR
Product Name MOSFET
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