Central Semiconductor Corp. MOSFET CMPDM7002AG BK

Description
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Description
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Datasheet
Datasheet Summary
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The CMPDM7002AG is a surface mount, N-channel enhancement-mode MOSFET in an SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The gate-source voltage is rated up to 40 V, and the operating and storage junction temperature range is -65 °C to +150 °C. The device is halogen-free by design. Typical on-state resistance is 3.0 Ω at VGS=5.0 V and ID=50 mA. The SOT-23 package has three leads: gate, source, and drain. This model meets RoHS compliance.

Datasheet Summary
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The CMPDM7002AG is a surface mount, N-channel enhancement-mode MOSFET in an SOT-23 package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 280 mA, and a maximum pulsed drain current of 1.5 A. Power dissipation is 350 mW with a thermal resistance of 357 °C/W. The gate-source voltage is rated up to 40 V, and the operating and storage junction temperature range is -65 °C to +150 °C. The device is halogen-free by design. Typical on-state resistance is 3.0 Ω at VGS=5.0 V and ID=50 mA. The SOT-23 package has three leads: gate, source, and drain. This model meets RoHS compliance.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs

MOSFET N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CMPDM7002AG BK
Product Name MOSFET
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