Central Semiconductor Corp. Single FETs, MOSFETs CMPDM303NH TR

The CMPDM303NH is a surface mount N-channel enhancement-mode silicon MOSFET in the SOT-23F package, designed for high-speed pulsed amplifier and driver applications. It has a drain-source voltage rating of 30 V, a continuous drain current of 3.6 A, and a maximum pulsed drain current of 14.4 A at 10 μs pulse width. The maximum power dissipation is 350 mW, with thermal resistance of 357 °C/W. The device features a low on-resistance of 0.078 Ω maximum at VGS = 2.5 V and a low threshold voltage range of 0.6 to 1.2 V. Operating and storage junction temperatures range from -55 °C to +150 °C. The part is marked with code 303C and pin configuration is Gate (1), Source (2), Drain (3).