Central Semiconductor Corp. Bipolar Transistors - BJT CMNT3906E TR

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Bipolar Transistors - BJT Small Sig Transistor PNP
Description
Bipolar Transistors - BJT Small Sig Transistor PNP
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The CMNT3906E is a PNP silicon transistor designed for compact, low-power applications such as DC/DC converters and battery-powered devices. It is packaged in an FEMTOmini™ SOT-953 surface-mount case measuring 1.0 mm × 0.8 mm with a 0.5 mm profile. The transistor has a continuous collector current rating of 200 mA, a collector-emitter voltage of 40 V, and a power dissipation of 250 mW. It features a low saturated collector-emitter voltage of 0.1 V typ at 50 mA and a typical current gain (hFE) of 150 at IC=1 mA. Operating and storage junction temperatures range from -65°C to +150°C. The device complies with RoHS standards.

Datasheet Summary
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The CMNT3906E is a PNP silicon transistor designed for compact, low-power applications such as DC/DC converters and battery-powered devices. It is packaged in an FEMTOmini™ SOT-953 surface-mount case measuring 1.0 mm × 0.8 mm with a 0.5 mm profile. The transistor has a continuous collector current rating of 200 mA, a collector-emitter voltage of 40 V, and a power dissipation of 250 mW. It features a low saturated collector-emitter voltage of 0.1 V typ at 50 mA and a typical current gain (hFE) of 150 at IC=1 mA. Operating and storage junction temperatures range from -65°C to +150°C. The device complies with RoHS standards.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMNT3906E TR
Bipolar Transistors - BJT CMNT3906E TR
Bipolar Transistors - BJT Small Sig Transistor PNP

Bipolar Transistors - BJT Small Sig Transistor PNP

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMNT3906E TR
Product Name Bipolar Transistors - BJT
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