Central Semiconductor Corp. Bipolar Transistors - BJT CMNT3904E TR

The CMNT3904E is an NPN silicon transistor in a FEMTOmini™ SOT-953 surface-mount package measuring 1.0 x 0.8 mm with a height of 0.5 mm, designed for compact, low-power applications such as DC/DC converters and battery-powered devices. It has a maximum collector current of 200 mA, a collector-emitter voltage rating of 40 V, and a power dissipation limit of 250 mW. The transistor features a typical VCE(sat) of 0.1 V at 50 mA and a minimum hFE of 70 at IC=50 mA and VCE=1.0 V. The thermal resistance is 500 °C/W and the operating junction temperature ranges from -65 °C to +150 °C. The part is RoHS compliant and meets AEC-Q200 automotive qualification standards.