Central Semiconductor Corp. MOSFET CMNDM8001 TR

The CMNDM8001 is a P-channel enhancement-mode silicon MOSFET in a SOT-953 surface mount package measuring 1.0 x 0.8 mm with a 0.5 mm profile, designed for low-threshold voltage and high-speed switching in portable and battery-powered applications. It has a drain-source voltage rating of 20 V, a continuous drain current of 100 mA, and a power dissipation of 250 mW. The device features a low on-resistance of 1.9 Ω at VGS=4.0 V and 2.4 Ω at VGS=2.5 V, with a threshold voltage range of 0.6 to 1.1 V. It is halogen-free by design and has a junction temperature range of -65 to +150 °C.