Central Semiconductor Corp. Bipolar Transistors - BJT CMLT5551HC TR

The CMLT5551HC is a surface-mount NPN silicon transistor in an SOT-563 package, designed for high-voltage and high-current amplifier applications. It has a collector-emitter voltage rating of 160 V, a continuous collector current of 1.0 A, and a power dissipation of 350 mW. The thermal resistance is 357 °C/W, and the operating and storage junction temperature range is -65 to +150 °C. The device features a minimum DC current gain (hFE) of 30 at 50 mA and 10 at 1.0 A, with a transition frequency of 100 MHz. The collector-base and emitter-base voltages are rated at 180 V and 6.0 V respectively. The SOT-563 package has six pins, with four collector terminals, one base, and one emitter. The part meets no specified industry standards beyond its electrical and thermal ratings.