Central Semiconductor Corp. Bipolar Transistors - BJT CMLT5551 TR

The CMLT5551 is a dual NPN silicon transistor in an SOT-563 surface-mount package, designed for high-voltage amplifier applications. Each transistor has a collector-base voltage rating of 180 V, collector-emitter voltage of 160 V, and continuous collector current of 600 mA. Power dissipation is rated at 350 mW with a thermal resistance of 357 °C/W. Operating and storage junction temperatures range from -65 °C to +150 °C. Electrical characteristics include an hFE range of 30 to 250 depending on collector current, transition frequency up to 300 MHz, and collector-emitter saturation voltage as low as 0.15 V at 10 mA. The device meets RoHS compliance and is marked with code 5C5.