Central Semiconductor Corp. Bipolar Transistors - BJT CMLT5078E TR

The CMLT5078E is a surface-mount dual transistor package containing one NPN and one PNP transistor, designed for high-gain, low-noise applications. It is housed in an SOT-563 package and rated for a maximum collector-base and collector-emitter voltage of 50 V, with a continuous collector current of 100 mA and power dissipation of 350 mW. The operating and storage junction temperature range is -65°C to +150°C. Enhanced specifications include a minimum hFE of 300 at IC=0.1mA, a saturation voltage VCE(SAT) of 100 mV at IC=10mA, and a transition frequency fT of 100 MHz. Noise figure is 3.0 dB at IC=100μA. The device meets RoHS compliance and is qualified under AEC-Q200 standards.