Central Semiconductor Corp. Bipolar Transistors - BJT CMLT3906E

The CMLT3906E is a PNP complementary bipolar transistor in an SOT-563 package, designed for small signal general purpose amplifier and switching applications. It has a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, and emitter-base voltage of 6.0 V. The continuous collector current is 200 mA, with a power dissipation of 350 mW on a ceramic or aluminum core PCB. The device exhibits a minimum hFE of 70 at VCE=1.0 V and IC=0.1 mA, and a maximum VCE(sat) of 0.2 V at IC=50 mA and IB=5.0 mA. The operating and storage junction temperature ranges from -65 °C to +150 °C. The part is halogen-free by design and meets RoHS requirements.