Central Semiconductor Corp. Bipolar Transistors - BJT CMLT3904E

CMLT3904E is an NPN transistor in a SOT-563 surface-mount package, designed for general-purpose amplifier and switching applications. It features a collector-base voltage rating of 60 V, collector-emitter voltage of 40 V, emitter-base voltage of 6.0 V, and continuous collector current of 200 mA. Power dissipation is rated at 350 mW on ceramic or aluminum core PCBs, 300 mW on FR-4 PCBs with 4.0 mm² copper pad, and 150 mW on FR-4 PCBs with 1.4 mm² copper pad. The thermal resistance is 357 °C/W. Current gain (hFE) ranges from 70 to 240 at VCE=1.0 V and IC=0.1 mA to 1.0 mA. Saturation voltage (VCE(sat)) is 0.2 V at IC=50 mA and IB=5 mA. Operating and storage junction temperatures range from -65 °C to +150 °C. The device is halogen-free by design and meets RoHS standards.